DD800S45KL3_B5 4500 V, 800 A diodes IGBT module

Überblick

4500 V IHV, 800 A 130mm Diode IGBT module with Emitter Controlled C3 Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5) - The best solution for your traction and industry applications.

Zusammenfassung der Merkmale

• High DC Stability
• High Dynamic Robustness
• High surge current capability
• 10.2 kV AC Isolation
• AlSiC Base Plate for increased Thermal Cycling Capability
• Package with CTI > 600
• High Creepage and Clearance Distances

Vorteile

• High power density for compact inverter designs
• Standardized housing

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