DF120R12W2H3_B27 1200 V, 120 A booster IGBT module

Überblick

EasyPACK™ 2B 1200 V, 120 A booster IGBT module with PressFIT contact technology and High Speed IGBT H3.

Zusammenfassung der Merkmale

  • Low switching losses
  • Fast silicon diode 1200 V
  • Al2O3 substrate with low thermal resistance
  • Integrated NTC temperature sensor
  • PressFIT contact technology

Vorteile

  • Compact module concept
  • Optimized customer’s development cycle time and cost
  • Configuration flexibility
Diagramme
Videos
Share
Support