DF200R12W1H3_B27 1200 V, 200 A booster IGBT module
Überblick
EasyPACK™ 1B 1200 V, 200 A booster IGBT modules with the proven PressFIT technology and High Speed IGBT H3.
Zusammenfassung der Merkmale
- High Speed IGBT H3
- Low Switching Losses
- Fast Silicon diode 1200V
- Al2O3 Substrate with Low Thermal Resistance
- Integrated NTC temperature sensor
- PressFIT Contact Technology
Vorteile
- Compact module concept
- Optimized customer’s development cycle time and cost
- Configuration flexibility
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