FF1200R17KP4_B2 1700 V, 1200 A dual IGBT module
Überblick
IHM 1700 V, 1200 A, 130mm dual IGBT module with soft-switching Trench/fieldstop IGBT4 and emitter controlled 3 diode.
Zusammenfassung der Merkmale
- Low V(cesat)
- Enlarged Diode for regenerative operation
- 4 kV AC 1min Insulation
- AlSiC Base Plate for increased Thermal Cycling Capability
- UL recognised
- High Power and Thermal Cycling Capability
Vorteile
- High power density for compact inverter designs
- Standardized housing
Diagramme
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