FF450R33T3E3_B5 3300 V, 450 A dual IGBT module

Überblick

XHP™ 3 3300 V, 450 A dual IGBT module with TRENCHSTOPTM IGBT3, emitter controlled diode and with enhanced isolation of 10.4 kV.

Zusammenfassung der Merkmale

  • High DC stability
  • High short-circuit capability
  • Low switching losses
  • Low VCEsat
  • Unbeatable robustness
  • Tvj op=150°C
  • VCEsat with positive temperature coefficient
  • AlSiC base plate for increased thermal cycling capability
  • Package with CTI > 600
  • Isolated base plate

Vorteile

  • One, high-power platform offering flexibility and scalability
  • High power density and optimized frame sizes
  • High reliability and long service life
  • Reduced system cost
  • Low inductance
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