FF800R12KE7 1200 V, 800 A dual IGBT module

Überblick

62 mm 1200 V, 800 A dual low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled 7 diode.

Zusammenfassung der Merkmale

  • Highest power density
  • Best-in-class VCE,sat
  • Tvj op = 175 °C overload
  • High Creepage and Clearance Distances
  • RoHS compliant
  • 4 kV AC 1 min Insulation
  • Package with CTI > 400
  • UL/CSA Certification with UL1557 E83336

Vorteile

  • Existing packages with higher current capability, allows to increase inverter output power with same frame size
  • Highest power density
  • Avoidance of paralleling of IGBT modules
  • Reduced system costs by simplification of the inverter systems
  • Flexibility
  • Highest reliability
Diagramme
Videos
Trainings

TRENCHSTOP™ IGBT7

In this training we will present TRENCHSTOP™ IGBT7 by focusing on its key features and technical benefits. We will also see the existing and planned portfolio of IGBT7 for industrial drives applications.

Support