FF800R12KE7_E 1200 V, 800 A common emitter IGBT module
Überblick
62 mm 1200 V, 800 A common emitter low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled diode.
Zusammenfassung der Merkmale
- Highest power density
- Best-in-class VCEsat
- Tvj op = 175°C overload
- High Creepage and Clearance Distances
- Isolated base plate
- Standard housing
- RoHS compliant
- 4 kV AC 1 min Insulation
- Package with CTI > 400
- UL/CSA Certification with UL1557 E83336
Vorteile
- Existing packages with higher current capability, allows to increase inverter output power with same frame size
- Highest power density
- Avoidance of paralleling of IGBT modules
- Reduced system costs by simplification of the inverter systems
- Flexibility and ready for three-level configuration
- Highest reliability
Diagramme
Trainings
In this training we will present TRENCHSTOP™ IGBT7 by focusing on its key features and technical benefits. We will also see the existing and planned portfolio of IGBT7 for industrial drives applications.
Support
