FF800R17KP4_B2 1700 V, 800 A dual IGBT module
Überblick
IHM-A 1700 V, 800 A 130 mm dual IGBT Module with IGBT4, enlarged diode and AlSiC base-plate.
Zusammenfassung der Merkmale
- Low V(cesat)
- Enlarged Diode for regenerative operation
- 4 kV AC 1min Insulation
- AlSiC Base Plate for increased Thermal Cycling Capability
- UL recognised
- High Power and Thermal Cycling Capability
Vorteile
- High power density for compact inverter designs
- Standardized housing
Diagramme
Support
