FZ1200R33HE4D_B9 3300 V, 1600 A single switch IGBT module

Überblick

IHV B 3300 V, 1200 A 190 mm single switch IGBT module with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. The experienced solution for transportation and industry applications.

Zusammenfassung der Merkmale

  • High DC stability
  • High short-circuit capability
  • Low switching losses
  • Low VCEsat
  • Unbeatable dynamic robustness
  • Tvj op =150°C
  • AlSiC base plate with AlN substrate
  • For increased thermal cycling
  • Fire & smoke EN45545 R22, R23: HL3
  • Package with CTI > 600
  • 2x PowerCycling vs state of the art
  • Enlarged diode for regenaration

Vorteile

  • Unbeatable robustness
  • 2xPC =200% lifetime
  • 2xPC =110% power same lifetime
  • 2xPC = 8K more safety buffer
  • Fault current RBSOA up to 3000 A
  • Performance like any 1500 A 3.3 kV
  • 1:1 mechanical swap to 190x140 IHV
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