IAUCN08S7L110 80 V, N-Ch, 11 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7

Überblick

Infineon introduces another MOSFET utilizing its next, leading edge, power technology; OptiMOS™ 7 80 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.

Zusammenfassung der Merkmale

  •  Fast switching times (turn on/off)
  • Low on-resistance, RDS(on)
  • Leading edge FOM (RDS(on) x Qg)
  • Low package resistance and inductance
  • High avalanche current capability
  • High SOA ruggedness
  • Tight threshold voltage, VGS(th), range
  • Excellent thermal performance
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature

Vorteile

  • Superior switching performance
  • Very low conduction losses
  • Highest power density in 5x6 mm2 package
  • High power efficiency
  • Well suited for parallel placement
  • Increased design ruggedness
  • Designed for Automotive robustness
  • High quality production for Automotive

Potentielle Zielanwendungen

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