IAUCN10S7N021 100V, N-Ch, 2.1 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7

Überblick

Infineon introduces its first MOSFET in our next, leading edge, power technology; OptiMOS™ 7 100V. This debut product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. IAUCN10S7N021 is a true step forward in the category of power density.

Zusammenfassung der Merkmale

  •  RDS(on) reduced 47% from prior best
  •  Industry’s best RDS(on)
  •  Fast switching times (turn on/off)
  •  Industry's best FOM (RDS(on)  x Qg)
  •  Low package resistance and inductance
  •  ID current 75% higher than prior best
  •  High avalanche current capability
  •  High SOA ruggedness
  •  Extended qualification beyond AEC-Q101
  •  Enhanced electrical testing
  •  MSL1 up to 260°C peak reflow
  •  175°C operating temperature

Vorteile

  • Minimized conduction losses
  •  Superior switching performance
  •  Increased current carrying capability
  •  Highest power density in 5x6mm package
  •  High power efficiency
  •  Small footprint & efficient cooling
  •  Tight VGS(th); good for parallel use
  •  Increased design ruggedness
  •  Designed for Automotive robustness
  •  High quality production for Automotive

Potentielle Zielanwendungen

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