IPZ65R019C7

Überblick

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Zusammenfassung der Merkmale

650V voltage
Revolutionary best-in-class R _DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Q_g
Space saving through use of smaller packages or reduction of parts
12 years manufacturing experience in superjunction technology

Vorteile

Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Outstanding CoolMOS™ quality

Potentielle Zielanwendungen

Please also find our 2EDL EiceDRIVER™ Compact 600V half bridge gate driver IC family. With level-shift SOI (Silicon-On-Insulator) technology, monolithic integrated low-ohmic and ultrafast bootstrap diodes for either IGBTs or MOSFETs.