IPT017N12NM6

Überblick

OptiMOS™ 6 power MOSFET normal level 120 V in TOLL package

This is a normal level 120 V MOSFET in TO-Leadless packaging with 1.7 mOhm on-resistance.  IPT017N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.

Zusammenfassung der Merkmale

Compared to OptiMOS™ 3, the technology features:

  • up to 58% better RDS(on)
  • up to 66% better FOMg
  • up to 90% better Qrr
  • up to 35% better FOMoss

Vorteile

  • Very low on-resistance
  • Very low reverse recovery charge
  • Excellent gate charge x RDS(on)
  • High avalanche energy rating
  • 175°C junction temperature rating
  • Pb-free plating
  • RoHS compliant
  • Halogen-free
  • MSL1 classified

Potentielle Zielanwendungen

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