IPT026N12NM6

Überblick

OptiMOS™ 6 power MOSFET normal level 120 V in TOLL package

This is a normal level 120 V MOSFET in TO-Leadless packaging with 2.6 mOhm on-resistance.

Compared to OptiMOS™ 3, the technology features: up to 58% better RDS(on), up to 66% better FOMg, up to 90% better Qrr and up to 35% better FOMoss. IPT026N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.

Zusammenfassung der Merkmale

  • Very low reverse recovery charge
  • Excellent gate charge x RDS(on)
  • High avalanche energy rating
  • 175°C junction temperature rating
  • Pb-free plating
  • RoHS compliant & halogen-free

Vorteile

  • High efficiency
  • Increased power density
  • Robust, reliable performance
  • Increased operating margin
  • Environmentally friendly
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