IQD009N06NM5CG
Überblick
OptiMOS™ power MOSFETs 60 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) .
The power MOSFET IQD009N06NM5CG 60 V normal-level comes in a PQFN 5x6 mm2 Source-Down package. The part offers a very low RDS(on) of 0.9 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, battery-powered applications, battery management, and low-voltage drives.
Zusammenfassung der Merkmale
- Cutting edge silicon technology OptiMOS™ 60 V with outstanding FOMs
- Source-Down package with improved thermal performance and ultra-low parasitics
- Source-Down package with maximized chip/package ratio
- Source-Down package in Center-Gate footprint
Vorteile
- Minimized conduction losses
- Reduced voltage overshoot
- Increased maximum current capability
- Fast switching
- Less device paralleling required
- Center-Gate footprint enables optimized parallelization
- Very low RDS(on) on 5x6 mm² PCB real-estate
- Improved thermal performance for easy thermal management
- Lowest package parasitics for best switching performance
- industry standard package
Potentielle Zielanwendungen
- Battery powered applications
- Battery powered tools
- Battery management
- Low-voltage drives
Complimentary products
- OptiMOS™ family
- DirectFET™ family
- StrongIRFET™ family
- HEXFET® family
- EiceDRIVER™ 1EDN family
- EiceDRIVER™ 2EDN family
- XMC™ family
- MOTIX™
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