IQD063N15NM5
Überblick
OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down package with industry-leading RDS(on).
The power MOSFET IQD063N15NM5 comes in a PQFN 5x6 Source-Down package. It's industry’s lowest RDS(on) of 6.3 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a lot of end applications like SMPS, telecom power, server, solar, battery-powered applications, medium voltage drives, drones, robotics, light electric vehicles, and battery management systems.
Zusammenfassung der Merkmale
- Cutting edge 150 V silicon technology
- Outstanding FOMs
- Improved thermal performance
- Ultra-low parasitics
- Maximized chip/package ratio
- Standard-Gate footprint
Vorteile
- Minimized conduction losses
- Reduced voltage overshoot
- Increased maximum current capability
- Fast switching
- Less device paralleling required
- Lowest RDS(on) on a 5x6 footprint
- Improved thermal performance
- Easy thermal management
- Best switching performance
- Industry-standard package
Potentielle Zielanwendungen
Support