IQDH29NE2LM5

Überblick

OptiMOS™ power MOSFETs 25 V in PQFN 5x6 Source-Down package with industry-leading RDS(on).

The power MOSFET IQDH29NE2LM5 comes in a PQFN 5x6 Source-Down package. It's industry's lowest RDS(on) of 0,29 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, telecom power, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-server farms.

Zusammenfassung der Merkmale

  • Cutting edge 25 V silicon technology
  • Outstanding FOMs
  • Improved thermal performance
  • Ultra-low parasitics
  • Maximized chip/package ratio
  • Standard-Gate footprint

Vorteile

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Lowest RDS(on) on a 5x6 footprint
  • Improved thermal performance
  • Easy thermal management
  • Best switching performance
  • Industry-standard package

Potentielle Zielanwendungen

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