IQDH88N06LM5CG

Überblick

OptiMOS™ power MOSFETs 60 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) .

The power MOSFET IQDH88N06LM5CG 60 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers the industry’s lowest RDS(ON) of 0.88 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like class-D audio, high-power chargers, SMPS, telecom, and intermediate bus conversion in high-performance computing, like hyper-scale datacenters and AI-server farms.

Zusammenfassung der Merkmale

  • Cutting edge silicon technology OptiMOS™ 60 V with outstanding FOMs
  • Source-Down package with improved thermal performance and ultra-low parasitics
  • Source-Down package with maximized chip/package ratio
  • Source-Down package in Center-Gate footprint

Vorteile

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Center-Gate footprint enables optimized parallelization
  • Very low RDS(on) on 5x6 mm² PCB real-estate
  • Improved thermal performance for easy thermal management
  • Lowest package parasitics for best switching performance
  • industry standard package

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