IQE013N04LM6CG
OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down center-gate package with industry leading RDS(on)
The IQE013N04LM6CG extends the innovative Source-Down family with the 1.35mOhm, OptiMOS™ power MOSFET 40V in a 3.3x3.3 PQFN Source-Down Center-Gate package. This best-in-class power MOSFET challenges the status quo in power density and form factor in the end application.
One target in power tool design is to minimize the internal restrictions of PCB area requirements, enabling an ergonomic design and optimizing the end user experience. Moving the inverter from the handle into the head simultaneously minimizes the volume of the power tool motor housing while keeping the torque of the tool at a reasonably high level for quick and easy action.
Zusammenfassung der Merkmale
- Major reduction in RDS(on) up to 25 percent
- Superior thermal performance in RthJC
- Optimized layout possibilities
- Standard and Center-Gate footprint
Vorteile
- High current capability
- More efficient use of PBC area
- Highest power density and performance
- Optimized footprint for MOSFET parallelization with Center-Gate
Potentielle Zielanwendungen
