IRF8306M
Überblick
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance.
Vorteile
- RoHS Compliant
- Low Profile (less than 0.7 mm)
- Dual Sided Cooling
- Low Conduction Losses
- Optimized for High Frequency Switching
- Low Package Inductance
- Integrated Monolithic Sckottky Diode
Potentielle Zielanwendungen
- Battery Protection
- Isolated Primary Side MOSFETs
- Isolated Secondary Side SyncRec MOSFETs
- Load Switch High Side
- Load Switch Low Side
Qualität
Support