ISZ157N08NM6

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OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3

OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering.

Compared to the latest OptiMOS™ 5 technology, Infineon's leading thin wafer technology enables significant performance improvement, including >28% lower RDS(on) and ~40% improved FOMs in PQFN 3.3x3.3. The performance improvement enables easier thermal design and less paralleling, leading to higher system efficiency, higher power density and system cost reduction.

Infineon’s OptiMOS™ 6 80 V family is ideal for high switching frequency applications such as telecom, server and solar, and thanks to the performance improvement OptiMOS™ 6 80 V can be used also in battery powered applications as well as in battery management systems (BMS).

Zusammenfassung der Merkmale

  • Benchmark performance
  • RDS(on) options for best cost/performance
  • Industry standard packages
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification

Vorteile

  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Wide portfolio for flexible supply chain
  • False turn-on immunity
  • Improved power, SOA & avalanche current
  • Robust reliable performance

Potentielle Zielanwendungen

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