OptiMOS™ 7 40 V

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The next leading MOSFET technology with lowest RDS(on)

Infineon's 40 V power MOSFETs in the latest OptiMOS™ 7 technology minimize the energy loss in the system offering the lowest RDS(on) in a SuperSO8 5x6, perfectly matching the requirements of BMS applications.

Whilst an improvement of up to 40% in RDS(on) compared to OptiMOS™ 6 40 V is achieved, it also reduces the PCB area by 50% compared to the DirectFET™ (L) solution, further increasing power density & reducing system cost.

Key features
  • BiC 40 V power MOSFET in a SuperSO8 5x6
  • Outstanding RDS(on)
  • System form factor reduction
  • High system efficiency and performance
  • Industry standard footprint

Infineon introduces the best-in-class 40 V power MOSFET in the latest OptiMOS™ 7 trench technology.

Maintaining the technology leadership position, this new product expands the OptiMOS™ 7 portfolio from the industry´s first 15 V power MOSFETs to the lowest RDS(on) in a SuperSO8 5x6 40 V power MOSFET, minimizing the energy loss in the system and making it best fit in BMS applications.

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