Source-Down PQFN package
OptiMOS™ power MOSFET Source-Down family with industry leading RDS(on), best FOMs, and superior thermal performance - PQFN (Power Quad Flat No-lead).
Infineon’s OptiMOS™ low- and medium-voltage power MOSFETs in an innovative and improved PQFN package with Source-Down configuration are presented to the market. The key feature of the Source-Down package concept is the orientation of the active side of the silicon chip toward the bottom side of the component.
In combination with the reinforced clip on the drain side on top of the silicon chip, package parasitics are significantly reduced and thermal performance is pushed to the next level of improvement.
The OptiMOS™ power MOSFETs 25 V-150 V in PQFN 3.3x3.3 mm² and 5x6 mm² Source-Down packages are now available in a BSC (bottom-side cooling) and a DSC (dual-side cooling) variant, with two different footprints: a Corner-Gate- and a Center-Gate version, with the latter optimized explicitly for parallelization.
The Source-Down package concept enables the lowest RDS(on) per footprint area and outstanding thermal performance, giving significant potential for improvements on a system level, like BOM-cost reduction, easy thermal management with less active cooling required, improvement of power density, and efficiency.
The OptiMOS™ low- and medium-voltage power MOSFET family in PQFN 3.3x3.3 mm² and PQFN 5x6 mm² Source-Down packages are the perfect match in drives, solar, SMPS, telecom, and server applications.
Key features
- Low RDS(on) in a small package
- Low gate charge
- Available in standard and logic level gate drive (4.5 V)
Key benefits
- Board space reduction
- Reduction in switching and driver losses
- Gate drive flexibility
Key features
- Low RDS(on) in a small package
- Low gate charge
- Available in standard and logic level gate drive (4.5 V)
- Supports dual-side cooling (exposed clip)
Key benefits
- Board space reduction
- Reduction in switching and driver losses
- Gate drive flexibility
- Provides increased power dissipation capability compared to overmolded variants
Key features
- Low RDS(on) in a small package
- Low gate charge
- Available in standard and logic level gate drive (4.5 V)
Key benefits
- Board space reduction
- Reduction in switching and driver losses
- Gate drive flexibility
Key features:
- Low RDS(on) in a small package
- Low gate charge
- Super logic level (2.5 V) and logic level (4.5 V) availability
- Supports dual-side cooling (exposed clip)
Key benefits:
- Board space reduction
- Reduction in switching and driver losses
- Gate drive flexibility
- Provides increased power dissipation capability compared to overmolded variants
Explore the 3D visualization of the innovative Infineon Source-Down packages! CLICK HERE!
