IRF9335
Überblick
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Vorteile
- Optimized for broadest availability from distribution partners
- Super logic level : Optimized for 4.5 V gate drive voltage, capable of 2.5 V gate drive voltage
- Reduced design complexity vs N-channel in high-side configuration
- Easier interface to microcontroller vs N-channel
- Industry standard surface-mount package
- Capable of being wave-soldered
Parameter
Parametrics | IRF9335 |
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Budgetary Price €/1k | 0.18 |
ID (@25°C) max | -5.4 A |
Moisture Sensitivity Level | 1 |
Mounting | SMD |
Ptot (@ TA=25°C) max | 2.5 W |
Package | SO-8 |
Polarity | P |
QG (typ @4.5V) | 4.7 nC |
Qgd | 2.6 nC |
RDS (on) (@4.5V) max | 110 mΩ |
RDS (on) (@10V) max | 59 mΩ |
RthJA max | 50 K/W |
Tj max | 150 °C |
VDS max | -30 V |
VGS(th) min max | -1.8 V -1.3 V -2.4 V |
VGS max | 20 V |
Parametrics | IRF9335 |
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Dokumente
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Data Sheet - IRF9335
EN
01_01 | 2010-06-07 | pdf | 273 KB
-
MOSFET some key facts about avalanche
EN
CN
JA
01_01 | 2022-03-23 | pdf | 2 MB
-
FIT Report - IRF9335
EN
03_00 | 2024-04-16 | pdf | 24 KB
-
P-channel power MOSFET overview
EN
02_00 | 2023-07-31 | pptx | 6.9 MB
Bestellung
Produktname | IRF9335 |
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OPN Info | IRF9335TRPBF |
Produktstatus | not for new design |
Gehäusename | SO8 |
Standard Package name | SO-8 |
Onlinebestellung | |
Bleifrei | yes |
Halogenfrei | yes |
RoHS konform | yes |
Verpackungsgröße | 4000 |
Verpackungstyp | TAPE & REEL |
Moisture Level | 1 |
Moisture Packing | NON DRY |
Produktname | IRF9335 |
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Support