IMBG120R350M1H

Überblick

CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package

The CoolSiC™1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

Zusammenfassung der Merkmale

  • Very low switching losses
  • Short-circuit withstand time, 3 µs
  • Fully controllable dV/dt
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V
  • Robustness against parasitic turn-on, 0 V turn-off gate voltage can be applied
  • Robust body diode for hard commutation
  • .XT interconnection technology for best-in-class thermal performance
  • Package creepage and clearance distances, > 6.1 mm
  • Sense pin for optimized switching performance

Vorteile

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost
  • SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink
Diagramme
Videos

Maintenance-free motor inverters with new CoolSiC™ MOSFETs for servo drives

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