IMBG65R260M1H
Überblick
SiC MOSFET in compact SMD package
CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R260M1H CoolSiC™ MOSFET 650V is a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in low power applications. It is optimized to enable max system performance, compactness and reliability.
Zusammenfassung der Merkmale
- Low Qrr and Qoss
- Low switching losses
- Commutation robust fast body diode
- Leading trench technology with superior gate oxide reliability
- .XT interconnection technology for best-in-class thermal performance
- Increased avalanche capability
- SMD package for direct integration into PCB
- Sense pin for optimized switching performance
Vorteile
- High performance, high reliability and ease of use
- Enable high system efficiency and power density
- Reduces system cost and complexity
- Enable cheaper, simpler and smaller systems
- Works in topologies with continuous hard commutation
- Fit for high temperature and harsh operations
- Enables bi-directional topologies
Potentielle Zielanwendungen
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