IMT65R260M1H CoolSiC™ MOSFET discrete 650 V in TOLL package

Überblick

Small footprint, low inductance and reduced thermal impedance for high density designs

CoolSIC™ MOSFET 650 V, 260 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 260 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for various systems. This 260 mΩ product is suitable for specific high efficiency designs in low power systems, like home appliances or low power industrial drives. It allows optimizing the performance per $, in hard commuting half and full bridge topologies, as well as increasing the efficiency of systems adopting topologies like the emerging Totem Pole PFC.

Zusammenfassung der Merkmale

  • Small form factor
  • Low parasitic inductance and Kelvin source connection
  • Reduced thermal impedance
  • .XT interconnect
  • Thermal improvement over D²PAK and similar to TO-220
  • Suitable for wave or reflow soldering
  • Industry standard package  - JEDEC industrial applications qualified (J-STD20 and JESD22)

Vorteile

  • Enable high system power density and high switching operations
  • Enable cheaper and faster SMD assembly
  • Ease of use and compatibility with existing vendors
  • Reduced switching losses
  • Lower case temperature and higher reliability
  • Enables easy design-in with complementing Infineon products like CoolMOS™ and CoolGaN™

Potentielle Zielanwendungen

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