IMYH200R100M1H CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
Überblick
The CoolSiC™ 2000 V 100 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.
Zusammenfassung der Merkmale
- VDSS = 2000 V for high DC-link systems up to 1500 VDC
- Very low switching losses
- Innovative HCC package
- 14 mm pin to pin creepage
- 5.4 mm clearance distances
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Robust body diode for hard commutation
- .XT interconnection technology for best-in-class thermal performance
- Improved humidity robustness
Vorteile
- High power density
- Excellent reliability
- Highest efficiency
- Ease of design
Diagramme
Support
