IMZ120R350M1H
CoolSiC™ MOSFET 1200 V, 350 mΩ in TO247-4 package build on a state-of-the-art trench semiconductor process is optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Zusammenfassung der Merkmale
- Best in class switching and conduction losses
- Benchmark high threshold voltage, Vth > 4 V
- 0V turn-off gate voltage for easy and simple gate drive
- Wide gate-source voltage range
- Robust and low loss body diode rated for hard commutation
- Temperature independent turn-off switching losses
- Driver source pin for optimized switching performance
Vorteile
- Highest efficiency
- Reduced cooling effort
- Higher frequency operation
- Increased power density
- Reduced system complexity
