IMZA65R030M1H
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package
CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The IMZA65R030M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.
Infineon’s SiC MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.
Zusammenfassung der Merkmale
- Low capacitances
- Optimized switching behavior at higher currents
- Commutation robust fast body diode with low reverse recovery charge (Qrr)
- Superior gate oxide reliability
- Excellent thermal behavior
- Increased avalanche capability
- Works with standard drivers
- 4-pin package
Vorteile
- High performance, high reliability and ease of use
- Allows high system efficiency
- Reduces system cost and complexity
- Enables smaller system size
- Works in topologies with continuous hard commutation
- Fit for high temperature and harsh operations
- Enables bi-directional topologies
Potentielle Zielanwendungen
