DF16MR12W1M1HF_B67

Überblick

Booster 1200 V CoolSiC™ MOSFET Module

EasyPACK™ 1B 1200 V, 33 mΩ and 2 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology

Zusammenfassung der Merkmale

  • Best-in-class packages with 12 mm height
  • Combination of leading edge WBG material and Easy module packages
  • Very low module stray inductance
  • Wide RBSOA
  • 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology
  • Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
  • Extended maximum gate-source voltages of +23 V and -10 V
  • Tvjop under overload condition up to 175°C
  • PressFIT pins
  • Integrated NTC temperature sensor

Vorteile

  • Outstanding module efficiency which enables system cost advantages
  • System efficiency improvement for reduced cooling requirements
  • Enabling higher frequency to Increase power density
  • Best cost performance ratio which leads to reduced system costs
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