F3L8MR12W2M1HP_B11
3-Level 1200 V CoolSiC™ MOSFET Easy Module
EasyPACK™ 2B 1200 V / 8 mΩ 3-Level module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor, pre-applied thermal interface material and PressFIT Contact Technology.
Zusammenfassung der Merkmale
- Best in Class packages with 12mm height
- Combination of leading edge WBG material and Easy module packages
- Very low module stray inductance
- Low and equal gate inductances
- Very symmetrical internal chip layouts
- Wide RBSOA
- 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology
- Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
- Extended maximum gate-source voltages of +23 V and -10 V
- Tvjop under overload condition up to 175°C
- PressFIT pins
- Pre-applied TIM
Vorteile
- Outstanding module efficiency which enables system cost advantages
- System efficiency improvement for reduced cooling requirements
- Enabling higher frequency to Increase power density
- Best cost performance ratio with reduced system costs
- Reduction of drift caused by dynamic components
Customers of power electronics require ever more modern, easy connection technologies, which also provide a higher reliability to meet the trends to higher temperatures and new applications.
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