FF8MR12W1M1H_B70

Überblick

CoolSiC™ MOSFET half-bridge module 1200 V

EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic.

Zusammenfassung der Merkmale

  • Best in class with 12.25mm height
  • Leading edge WBG material
  • Very low module stray inductance
  • Enhanced CoolSiC™ MOSFET Gen 1
  • With enhanced 1 trench technology
  • Enlarged gate drive voltage window
  • Voltage window from 15 to 18 & 0 to -5 V
  • Extended maximum gate-source voltages
  • Gate-source voltages of +23 V and -10 V
  • Tvjop: overload condition up to 175°C
  • Integrated NTC temperature sensor

Vorteile

  • Outstanding module efficiency
  • System cost advantages
  • System efficiency improvement
  • Reduced cooling requirements
  • Enabling higher frequency
  • Increase of power density
  • Thermal conductivity of DCB material

 

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Customers of power electronics require ever more modern, easy connection technologies, which also provide a higher reliability to meet the trends to higher temperatures and new applications.

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