BFY450 (P)
Überblick
HiRel Microwave Transistor
Zusammenfassung der Merkmale
- HiRel Discrete and Microwave Semiconductor
- For Medium Power Amplifiers
- Compression Point P-1dB =19dBm 1.8 GHz
- Max. Available Gain Gma = 16dB at 1.8 GHz
- Hermetically sealed microwave package
- Transition Frequency fT = 20 GHz
- SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line
- Type Variant No. 03
Potentielle Zielanwendungen
Quality level for Engineering Models
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