BFY650B-11 (P)
Überblick
HiRel Microwave Transistor
Zusammenfassung der Merkmale
- HiRel Discrete and Microwave Semiconductor
- For high power amplifiers
- Ideal for low phase noise oscilators
- Maximum available gain: Gma = 19 dB at 1.8 GHz
- Noise figure F = 0.9 dB at 1.8 GHz
- Hermetically sealed microwave package
Potentielle Zielanwendungen
Quality level for Engineering Models
Support
