BAT15-02LRH - Infineon Technologies

Überblick

Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LRH a suitable choice for mixer and detector functions in applications whose frequencies are as high as 12 GHz.

Zusammenfassung der Merkmale

• Low inductance L = 0.4 nH (typical)

• Low capacitance C = 0.2 pF (typical) at 1 MHz

• TSLP-2-7 package (1 mm x 0.6 mm x 0.39 mm) with a 0402 footprint

• Pb-free, RoHS compliant and halogen-free

Potentielle Zielanwendungen

For mixer and detectors in:

• LiDAR systems

• Radar modules and systems