BAT15-04R

Überblick

This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04R a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Zusammenfassung der Merkmale

  • Low inductance Ls = 1.5 nH (typical)
  • Low capacitance C = 0.27 pF (typical) at 1 MHz
  • Industry standard SOT23 package (2.9 mm x 2.4 mm x 1 mm)
  • Pb-free (RoHS compliant)

Potentielle Zielanwendungen

For mixers and detectors in:

  • Satellite systems
  • Low Noise Block for Ku bands
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