BAR63-03W

Überblick

This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and very low resistance make it suitable for a diversity of switching applications, simplify design-in and support designers in creating versatile end solutions.

Zusammenfassung der Merkmale

  • Low capacitance C = 0.31 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 GHz
  • Very low forward resistance RF = 1.9 Ω (typical) at forward current IF = 5 mA and frequency f = 100 MHz
  • Charge carrier lifetime τ = 75 ns (typical)
  • Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm)
  • Pb-free, RoHS compliant and halogen-free

Potentielle Zielanwendungen

Optimized for low bias current RF and high-speed interface switches in:

  • Wireless communications
  • High speed data networks
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