BAR64-05

Überblick

This Infineon RF PIN diode provides high-voltage handling capabilities, comes with low loss and offers low distortion levels.

Its low forward resistance, low capacitance and low inductance simplify design-in and support designers in creating versatile endsolutions.

Zusammenfassung der Merkmale

  • Very low capacitance C = 0.22 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 GHz
  • Low forward resistance RF = 2.7 Ω (typical) at forward current IF = 10 mA and frequency f = 2.5 GHz
  • Low signal distortion
  • Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm)
  • Pb-free, RoHS compliant and halogen-free

Potentielle Zielanwendungen

Optimized for low bias current RF and high-speed interface switches in:

  • Wireless communications
  • High speed data networks
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