BFP196

Überblick

NPN Silicon RF Transistor

Zusammenfassung der Merkmale

  • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA
  • Power amplifier for DECT and PCN systems
  • fT = 7.5 GHz, F = 1.3 dB at 900 MHz
  • Pb-free (RoHS compliant) package

Potentielle Zielanwendungen

  • Wireless Communications
  • LNA in RF Front-end
  • For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
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