BFP420

Überblick

NPN Silicon RF Transistor for high gain low noise amplifiers

Zusammenfassung der Merkmale

  • For high gain low noise amplifiers
  • For oscillators up to 10 GHz
  • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz
  • Transition frequency fT = 25 GHz
  • Gold metallization for high reliability
  • SIEGET® 25 GHz fT - Line
  • Pb-free (RoHS compliant) package

Potentielle Zielanwendungen

  • Wireless Communications
  • For active mixer, amplifier and oscillator applications in RF Front-end
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