BFP460

Überblick

NPN Silicon RF Transistor

Zusammenfassung der Merkmale

  • General purpose low noise amplifier for low voltage, low current applications
  • High ESD robustness, typical 1500V (HBM)
  • Low minimum noise figure 1.1 dB at 1.8 GHz
  • High linearity: output compression point OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz
  • Easy to use standard package with visible leads
  • Pb-free (RoHS compliant) package

Potentielle Zielanwendungen

  • Wireless Communications
  • For amplifier and oscillator applications in RF Front-end
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