BFP540ESD

Überblick

NPN Silicon RF Transistor for ESD protected high gain low noise amplifier

Zusammenfassung der Merkmale

Excellent ESD performance typical value 1000 V (HBM)
Outstanding Gms = 21.5 dB
Noise Figure F = 0.9 dB
Gold metallization for high reliability
SIEGET® 45 - Line
Pb-free (RoHS compliant) package

Potentielle Zielanwendungen

Wireless Communications
For amplifier and oscillator applications in RF Front-end

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