BFP640
Überblick
Zusammenfassung der Merkmale
- High gain low noise RF transistor
- Provides outstanding performance for a wide range of wireless applications
- Ideal for CDMA and WLAN applications
- Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz
- High maximum stable gain :Gms = 24 dB at 1.8 GHz
- Gold metallization for extra high reliability
- 70 GHz fT-Silicon Germanium technology
- Pb-free (RoHS compliant) package
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