BFP640F

Überblick

NPN Silicon Germanium RF Transistor

Zusammenfassung der Merkmale

 

  • High gain low noise RF transistor
  •  Provides outstanding performance for a wide range of wireless applications
  •  Ideal for CDMA and WLAN applications
  •  Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz
  • High maximum stable gain:Gms = 23 dB at 1.8 GHz
  • Gold metallization for extra high reliability
  •  70 GHz fT-Silicon Germanium technology
  • Pb-free (RoHS compliant) package
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