BFP640FESD

Überblick

The BFP640FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic thin small flat 4-pin dual emitter package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.

Zusammenfassung der Merkmale

  • Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
  • 2 kV ESD robustness (HBM) due to integrated protection circuits
  • High maximum RF input power of 21 dBm
  • 0.6 dB minimum noise figure typical at 1.5 GHz, 0.65 dB at 2.4 GHz, 6 mA
  • 28.5 dB maximum gain Gms typical at 1.5 GHz, 25 dB at 2.4 GHz, 30 mA
  • 26 dBm OIP3 typical at 2.4 GHz, 30 mA
  • Accurate SPICE GP model available to enable effective design in process (see chapter 6)
  • Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads

Potentielle Zielanwendungen

As Low Noise Amplifier (LNA) in:

  • Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5GHz, UWB, Bluetooth
  • Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
  • Multimedia applications such as mobile/portable TV, CATV, FM radio
  • 3G/4G UMTS/LTE mobile phone applications
  • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier
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