BFP740ESD

Überblick

The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Zusammenfassung der Merkmale

  • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power,  2 kV ESD robustness (HBM) due to integrated protection circuits
  • NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3V, 6 mA
  • High gain Gms = 25.5 dB at 2.4 GHz and Gma = 18.5 dB at 5.5 GHz, 3V, 25 mA
  • OIP3 = 24 dBm at 5.5 GHz, 3V, 25 mA

 

Potentielle Zielanwendungen

  • Wireless communications: WLAN, WiMax and UWB
  • Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
  • Multimedia applications such as portable TV, CATV, FM Radio
  • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
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