BFP740FESD
Überblick
The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) with an integrated ESD protection
Zusammenfassung der Merkmale
- Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits
- NFmin = 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3V, 6 mA
- High gain Gms = 26 dB at 2.4 GHz and Gma = 20.5 dB at 5.5 GHz, 3V, 25 mA
- OIP3 = 23.5 dBm at 5.5 GHz, 25 mA
- Low profile and small form factor leadless package
Potentielle Zielanwendungen
- Wireless communications: WLAN, WiMax and UWB
- Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, Beidou, Galileo), Satellite radio (SDARs, DAB) and C-band LNB
- Multimedia applications such as portable TV, CATV, FM Radio
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
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