BFR182W

Überblick

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA

Zusammenfassung der Merkmale

  • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
  • fT = 8 GHz, F = 0.9 dB at 900 MHz
  • Pb-free (RoHS compliant) package

Potentielle Zielanwendungen

  • Wireless Communications
  • For amplifier and oscillator applications in RF Front-end
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