BFR340F

Überblick

NPN Silicon RF Transistor

Zusammenfassung der Merkmale

General purpose Low Noise Amplifier
Ideal for low current operation
High breakdown voltage enables operation in automotive applications
Minimum noise figure 1.0 dB @ 1mA,1.5V,1.9GHz
Small package 1,2 x 1,2 mm2 with visible leads
Pb-free (RoHS compliant) package

Potentielle Zielanwendungen

Wireless Communications
For amplifier and oscillator applications in RF Front-end

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